Abstract: Journal of Electronics Science and Electrical Research

Abstract:
Ultra-Thin-Silicon-on-Sapphire (UTSi SOS) is a perspective industrially exploitered CMOS technology for fabrication of novel highly integrated low power multimedia and wireless communication RF ICs. In this paper the TCAD and SPICE models of UTSi SOS MOFETs considering the characteristic features of UTSi SOS device structure were discussed. To verify the TCAD model, the fitting procedure for the parameters of trapped charge and mobility of electrons and holes in the Ultra-Thin channel layer was proposed. The version of compact SPICE UT SOI model for SOI/SOS MOSFETs considering the super-wide temperature range (-260oC…+300oC) was developed. The special sub-circuit was proposed to account for the kink effect.